HCN3906(pnp) g eneral purpose transistor r eplacement type : 2n3906 feat ur es ? pn p s ilico n epi t axia l pla nar transisto r fo r switchin g and amplifie r applications ? as complemen t ar y type , the np n tra n sisto r hc n39 04 is recommen d ed ? thi s transisto r is als o av a ilabl e i n th e so t-2 3 cas e with th e typ e designatio n ha bt3906 m aximum ratings (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25c unless otherwise noted) parameter symbol test conditions min typ max unit c ollector -b ase b reakdown v oltage v cbo i c =- 10 a, i e =0 - 40 v c ollector -emitter b reakdown v oltage v ceo i c =-1m a, i b =0 -40 v emitter-b ase b reakdown v oltage v ebo i e =- 10 a , i c =0 -5 v c ollector c ut - off c urrent i cbo v cb =- 40 v , i e =0 - 0. 1 a collector c ut - off c urrent i cex v ec =- 30v ,v be =- 3v - 50 na emi tter c ut - off c urrent i ebo v eb =-5 v , i c =0 - 0. 1 a dc c urrent g ain h fe(1) v ce =-1 v , i c =-10ma 100 400 h fe( 2) v ce =-1 v , i c =- 50 ma 60 h fe( 3) v ce =-1 v , i c =-1 00 ma 30 collector -emitter s aturation v oltage v ce(sat) i c =- 50 m a , i b =-5ma - 0. 4 v ba se-emitter s aturation v oltage v be(sat) i c =- 50 m a , i b =-5ma - 0. 95 v transition f requency f t v ce =- 20 v , i c =- 10 ma f= 10 0mhz 250 mhz de lay time td v cc =- 3 v,v be =- 0. 5v, i c =- 10m a,i b1 =- 1m a 35 ns ris e time tr 35 ns s torage time ts v cc =- 3 v,ic= - 10ma i b1 =i b2 =- 1m a 225 ns f all time tf 75 ns cla ss if ic at i on of h fe ra nk o y g r a n ge 100 - 200 20 0- 300 300 - 400 p ar a met er symbol v al ue un it c ollector - base voltage v cbo - 40 v c ollector - emitter voltage v ceo - 40 v emi tter- base voltage v ebo -5 v collector current - continuous i c - 200 ma collector power dissipation p c 625 mw j unction temperature t j 150 c s torage temperature t stg - 55 - 15 0 c to -92 1: emitter 2: base 3:collector ?guangdong hottech industrial co.,ltd e- mail:hkt@heketai.com 1 / 4
HCN3906(pnp) general purpose transistor typic al c ha racteristi cs ?guangdong hottech industrial co.,ltd e- mail:hkt@heketai.com 2 / 4 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 -1 -10 -100 10 100 1000 0 25 50 75 100 125 150 0 125 250 375 500 625 750 -1 -10 -100 -400 -600 -800 -1000 -1200 -0.1 -1 -10 10 -1 -10 -100 1000 -0 -2 -4 -6 -8 -10 -0 -20 -40 -60 -80 -100 -1 -10 -100 -10 -100 -1000 v cb / v eb c ob / c ib v be i c i c h fe t a =100 t a =25 -30 -3 -0.3 common emitter v ce =-5v collector current i c (ma) base-emitter voltage v be (v) static characteristic -200 t a =100 t a =25 common emitter v ce =-1v 300 30 -30 -3 dc current gain h fe collector current i c (ma) f t p c t a collector power dissipation p c (mw) ambient temperature t a ( ) t a =100 t a =25 =10 -200 -30 -3 base-emmitter saturation voltage v besat (mv) collector current i c (ma) 3 1 f=1mhz i e =0/i c =0 t a =25 cob cib -0.3 -20 -3 capacitance c (pf) reverse bias voltage v (v) 300100 -30 -3 common emitter v ce =-20v t a =25 transition frequency f t (mhz) collector current i c (ma) common emitter t a =25 -500ua -350ua -450ua -300ua -250ua -400ua -200ua -150ua -100ua i b =-50ua collector current i c (ma) collector-emitter voltage v ce (v) i c t a =25 t a =100 =10 v besat v cesat i c i c -200 -300 -30 -30 -3 collector-emmitter saturation voltage v cesat (mv) collector current i c (ma)
HCN3906(pnp) general purpose transistor ?guangdong hottech industrial co.,ltd e- mail:hkt@heketai.com 3 / 4 symbol dimensions in millimeters dimensions in inches min. max. min. max. a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4.300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 to-92 package outline dimensions
HCN3906(pnp) general purpose transistor ?guangdong hottech industrial co.,ltd e- mail:hkt@heketai.com 4 / 4 to-92 package tapeing dimension
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